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PBSS4160DPN

  • NPN+PNP Bipolar Transistor Array, Low Vcesat, 60V,1.0A(N), 0.9A(P), 290mW min, hFE typ 500(N)/350(P) , 150MHz min
Product name Comet: PBSS4160DPN
Manufacturer name: PBSS4160DPN
Manuafacturer: NXP (65)
Category: Transistors (809)
Subcategory: Transistors Bipolar (287)
Package: SOT457
Description: NPN+PNP Bipolar Transistor Array, Low Vcesat, 60V,1.0A(N), 0.9A(P), 290mW min, hFE typ 500(N)/350(P) , 150MHz min
Order code: 5045514
Image is for illustrative purposes only!
Specification
Manufacturer
NXP
Type
NPN/PNP
Package
*SOT23-6/TSOP6/SC-74
Max. CE voltage
60 V
Maximum collector current
1.0/0.9 A
Maximum power dissipation
0.42 W
Vce_max saturation @ Ib, Ic
0.25V @ 100mA, 1A / 0.33V @ 100mA, 1A
Current gain
200 @ 500mA, 5V / 150 @ 500mA, 5V
Max. Switching frequency
150 MHz Min
Operating Temperature Tj_max
+150 °C
Attached files
Unit price without VAT
buc. EUR
1 0.21210
10 0.15377
100 0.13999
1000 0.12196
3000 0.10605
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