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We would like to inform you that our office will be closed on 24.12.2025. – 07.01.2026.
All online orders received starting with 23.12.2025 after 15:00 will be processed on 08.01.2026. Delivery of ordered goods will be made from 09.01.2026. Thank you for your understanding.
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AP9997GJ

  • NMOS 100V 11A 34.7W 120mOhm/10V; 200mOhm/4.5V
Product name Comet: AP9997GJ
Manufacturer name: AP9997GJ-HF-3TB
Manuafacturer: ADVANCED POWER ELECTR. CO (112)
Category: Transistors (826)
Subcategory: Transistors FET - MOSFET (422)
Package: TO-251
Description: NMOS 100V 11A 34.7W 120mOhm/10V; 200mOhm/4.5V
Order code: 18516
Image is for illustrative purposes only!
Specification
Manufacturer
ADVANCED POWER ELECTR. CO
Type
NMOS
Package
IPAK, TO251
VDSS max
100 V
On resistance
0.12 Ω
Maximum Drain current
11 A
Maximum power dissipation
34.7 W
Power groups
Middle power 20 ÷ 100 W
Attached files
Unit price without VAT
buc. USD
1 0.45454
5 0.31818
25 0.29545
100 0.27273
500 0.25252

Pack: 960
If you order quantity multiple of pack quantity, it will speed up the processing of your order.

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Bulgaria
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Product Name: AP9997GJ
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